Production of HfB2–SiC (10–65 vol % SiC) Ultra-High-Temperature Ceramics by Hot Pressing of HfB2–(SiO2–C) Composite Powder Synthesized by the Sol–Gel Method

Resumo

The formation of HfB₂–SiC (10–65 vol % SiC) ultra-high-temperature ceramics by hot pressing of HfB₂–(SiO₂–C) composite powder synthesized by the sol–gel method was studied. By the example of HfB₂–30 vol % SiC ceramic, it was shown that the synthesis of nanocrystalline silicon carbide is completed at temperatures of as low as ≥1700°C (crystallite size 35–39 nm). The production of the composite materials with various contents of fine silicon carbide at 1800°C demonstrated that the samples of the composition HfB₂–SiC (20–30 vol % SiC) are characterized by the formation of SiC crystallites of the minimum sizes (36–38 nm), by the highest density (89%), and by higher oxidation resistance during heating in an air flow to 1400°C.