Spatial Structure, Electron Energy Spectrum, and Growth of HfSin− Clusters (n = 6–20)
- 作者: Borshch N.A.1, Kurganskii S.I.2
-
隶属关系:
- Voronezh State Technical University
- Voronezh State University
- 期: 卷 63, 编号 8 (2018)
- 页面: 1062-1068
- 栏目: Theoretical Inorganic Chemistry
- URL: https://journals.rcsi.science/0036-0236/article/view/168910
- DOI: https://doi.org/10.1134/S003602361808003X
- ID: 168910
如何引用文章
详细
The optimized spatial structure and calculated electronic spectra of anionic clusters HfSin− (n = 6–20) are presented. The calculations have been performed by the density functional theory method. By comparing the calculated and available experimental data, the spatial structures of the clusters detected in the experiment have been determined. It has been established that the formation of endohedral structures begins with n = 12, when a stable structure of a prism encapsulating a hafnium atom is formed. Clusters with n = 12 and 16 have increased stability and are basic for the construction of clusters with a close number of silicon atoms.
作者简介
N. Borshch
Voronezh State Technical University
编辑信件的主要联系方式.
Email: n.a.borshch@ya.ru
俄罗斯联邦, Voronezh, 394026
S. Kurganskii
Voronezh State University
Email: n.a.borshch@ya.ru
俄罗斯联邦, Voronezh, 394006
补充文件
