On the Theory of Atomic Diffusion after Ion Implantation
- 作者: Kesarev A.1, Kondratyev V.1, Lomaev I.1
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隶属关系:
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
- 期: 卷 119, 编号 11 (2018)
- 页面: 1101-1106
- 栏目: Structure, Phase Transformations, and Diffusion
- URL: https://journals.rcsi.science/0031-918X/article/view/167954
- DOI: https://doi.org/10.1134/S0031918X18110078
- ID: 167954
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详细
An analytical solution to the problem of atomic diffusion after ion implantation (taking into account the drift of impurity atoms) in a semi-infinite medium characterized by a nonuniform distribution of nonequilibrium vacancies is obtained using asymptotic methods in the theory of differential equations. This solution can be used at annealing times that are longer than the setting time for the steady-state nonuniform distribution of vacancies originating from the implantation region, but correspond to a diffusion length that is shorter than the characteristic scale of variation of the impurity diffusion coefficient. This work analyzes the applicability of this solution in the general form. It has been compared to the results of numerical calculations for an exponential coordinate dependence of the vacancy density with the drift of atoms, which results from the nonuniform distribution of nonequilibrium vacancies, either taken into account or neglected. The concentration profiles of implanted aluminum in silicon at the initial stage of diffusion are calculated within the proposed approach.
作者简介
A. Kesarev
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: kesarev@imp.uran.ru
俄罗斯联邦, Ekaterinburg, 620108
V. Kondratyev
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: kesarev@imp.uran.ru
俄罗斯联邦, Ekaterinburg, 620108
I. Lomaev
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: kesarev@imp.uran.ru
俄罗斯联邦, Ekaterinburg, 620108