Anisotropic Magnetoelectric Effect in a Magnetostrictive Fiber Composite—Piezoelectric Plate Structure
- Authors: Fetisov L.Y.1, Saveliev D.V.1, Chashin D.V.2, Vieunic D.A.1, Shabin P.A.1
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Affiliations:
- Department of Nanoelectronics, MIREA—Russian Technological University
- Research and Education Centre Magnetoelectric materials and devices, MIREA—Russian Technological University
- Issue: Vol 120, No 13 (2019)
- Pages: 1304-1308
- Section: Article
- URL: https://journals.rcsi.science/0031-918X/article/view/168942
- DOI: https://doi.org/10.1134/S0031918X19130052
- ID: 168942
Cite item
Abstract
The magnetoelectric (ME) effect in a planar structure containing a mechanically coupled layer of a magnetostrictive fiber composite (MFC) and a layer of piezoelectric lead zirconate titanate (PZT) is investigated. MFC was a single layer of Ni wires 25 μm in diameter located at a distance of ~150 µm from each other and fixed in a polymer matrix. The structure was placed in an external dc field H and excited by ac magnetic field. It was shown that MFC magnetostriction anisotropy leads to a strong ME effect anisotropy. The magnetoelectric coefficient for parallel orientation of the magnetic field relative to the fiber was ~1.15 V/(Oe cm), and for perpendicular orientation ~0.2 V/(Oe cm). Nonlinear frequency doubling effect was observed in the structure for parallel orientation of H.
About the authors
L. Y. Fetisov
Department of Nanoelectronics, MIREA—Russian Technological University
Author for correspondence.
Email: fetisovl@yandex.ru
Russian Federation, Moscow, 119454
D. V. Saveliev
Department of Nanoelectronics, MIREA—Russian Technological University
Email: fetisovl@yandex.ru
Russian Federation, Moscow, 119454
D. V. Chashin
Research and Education Centre Magnetoelectric materials and devices, MIREA—Russian Technological University
Email: fetisovl@yandex.ru
Russian Federation, Moscow, 119454
D. A. Vieunic
Department of Nanoelectronics, MIREA—Russian Technological University
Email: fetisovl@yandex.ru
Russian Federation, Moscow, 119454
P. A. Shabin
Department of Nanoelectronics, MIREA—Russian Technological University
Email: fetisovl@yandex.ru
Russian Federation, Moscow, 119454
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