Мақаланы E-mail арқылы жіберу Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles
- Авторлар: Kosarev A.N.1,2,3, Chaldyshev V.V.1,2,4, Kondikov A.A.1,4, Vartanyan T.A.4, Toropov N.A.4, Gladskikh I.A.4, Gladskikh P.V.4, Akimov I.1,3, Bayer M.1,3, Preobrazhenskii V.V.5, Putyato M.A.5, Semyagin B.R.5
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Мекемелер:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- Peter the Great St. Petersburg Polytechnic University
- Experimentelle Physik 2, Technische Universität Dortmund
- ITMO University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Шығарылым: Том 126, № 5 (2019)
- Беттер: 492-496
- Бөлім: Optics of Low-Dimensional Structures, Mesostructures, and Metamaterials
- URL: https://journals.rcsi.science/0030-400X/article/view/165984
- DOI: https://doi.org/10.1134/S0030400X19050151
- ID: 165984
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied.
Авторлар туралы
A. Kosarev
Ioffe Physical Technical Institute, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 195251; Dortmund, 44221
V. Chaldyshev
Ioffe Physical Technical Institute, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University; ITMO University
Email: Tigran.Vartanyan@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 195251; St. Petersburg, 197101
A. Kondikov
Ioffe Physical Technical Institute, Russian Academy of Sciences; ITMO University
Email: Tigran.Vartanyan@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
T. Vartanyan
ITMO University
Хат алмасуға жауапты Автор.
Email: Tigran.Vartanyan@mail.ru
Ресей, St. Petersburg, 197101
N. Toropov
ITMO University
Email: Tigran.Vartanyan@mail.ru
Ресей, St. Petersburg, 197101
I. Gladskikh
ITMO University
Email: Tigran.Vartanyan@mail.ru
Ресей, St. Petersburg, 197101
P. Gladskikh
ITMO University
Email: Tigran.Vartanyan@mail.ru
Ресей, St. Petersburg, 197101
I. Akimov
Ioffe Physical Technical Institute, Russian Academy of Sciences; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
Ресей, St. Petersburg, 194021; Dortmund, 44221
M. Bayer
Ioffe Physical Technical Institute, Russian Academy of Sciences; Experimentelle Physik 2, Technische Universität Dortmund
Email: Tigran.Vartanyan@mail.ru
Ресей, St. Petersburg, 194021; Dortmund, 44221
V. Preobrazhenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
Ресей, Novosibirsk, 630090
M. Putyato
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
Ресей, Novosibirsk, 630090
B. Semyagin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: Tigran.Vartanyan@mail.ru
Ресей, Novosibirsk, 630090
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