Luminescence of Ga2O3 Crystals Excited with a Runaway Electron Beam
- Authors: Burachenko A.G.1, Beloplotov D.V.1, Prudaev I.A.2, Sorokin D.A.1, Tarasenko V.F.1,2, Tolbanov O.P.2
- 
							Affiliations: 
							- Institute of High-Current Electronics, Siberian Branch
- National Research Tomsk State University
 
- Issue: Vol 123, No 6 (2017)
- Pages: 867-870
- Section: Condensed-Matter Spectroscopy
- URL: https://journals.rcsi.science/0030-400X/article/view/165583
- DOI: https://doi.org/10.1134/S0030400X17110042
- ID: 165583
Cite item
Abstract
The spectra and amplitude–time characteristics of the radiation of studied Sn and Fe-doped Ga2O3 crystals excited with a runaway electron beam and an excilamp with a wavelength of 222 nm were investigated. The main contribution to the luminescence of samples in the region of 280–900 nm under excitation with a beam was shown to be made by cathodoluminescence. In the Fe-doped crystal, a new cathodeand photoluminescence band was detected within a wavelength range of 650–850 nm. In the Sn-doped crystal, Vavilov–Cherenkov radiation was detected in the region of 280–300 nm using a monochromator and a photomultiplier.
About the authors
A. G. Burachenko
Institute of High-Current Electronics, Siberian Branch
							Author for correspondence.
							Email: bag@loi.hcei.tsc.ru
				                					                																			                												                	Russian Federation, 							Tomsk, 634055						
D. V. Beloplotov
Institute of High-Current Electronics, Siberian Branch
														Email: bag@loi.hcei.tsc.ru
				                					                																			                												                	Russian Federation, 							Tomsk, 634055						
I. A. Prudaev
National Research Tomsk State University
														Email: bag@loi.hcei.tsc.ru
				                					                																			                												                	Russian Federation, 							Tomsk, 634050						
D. A. Sorokin
Institute of High-Current Electronics, Siberian Branch
														Email: bag@loi.hcei.tsc.ru
				                					                																			                												                	Russian Federation, 							Tomsk, 634055						
V. F. Tarasenko
Institute of High-Current Electronics, Siberian Branch; National Research Tomsk State University
														Email: bag@loi.hcei.tsc.ru
				                					                																			                												                	Russian Federation, 							Tomsk, 634055; Tomsk, 634050						
O. P. Tolbanov
National Research Tomsk State University
														Email: bag@loi.hcei.tsc.ru
				                					                																			                												                	Russian Federation, 							Tomsk, 634050						
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