Time-resolved temperature field of monocrystalline silicon irradiated by a millisecond pulse laser
- Autores: Ming G.1,2, Yong T.1, Xun G.1, Boshi Y.1, Guangyong J.1
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Afiliações:
- School of Science
- College of Optical and Electronical Information Changchun University of Science and Technology
- Edição: Volume 58, Nº 4 (2017)
- Páginas: 693-701
- Seção: Article
- URL: https://journals.rcsi.science/0021-8944/article/view/160244
- DOI: https://doi.org/10.1134/S0021894417040149
- ID: 160244
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Resumo
Based on the thermal conduction equation that takes into account phase changes and the evolution of thermophysical parameters with temperature, laser-induced heating and melting of monocrystalline silicon are studied. The changes in the behavior of silicon temperature at different places within the irradiation spot and at different time instants are investigated by the finite element and finite difference methods for a wide range of energy and duration of millisecond laser pulses with the Gaussian spatial and temporal shapes. The numerical results are compared with the experimental measurements.
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Sobre autores
G. Ming
School of Science; College of Optical and Electronical Information Changchun University of Science and Technology
Autor responsável pela correspondência
Email: guoming1012@sina.com
República Popular da China, Changchun, 130022; Changchun, 130022
T. Yong
School of Science
Email: guoming1012@sina.com
República Popular da China, Changchun, 130022
G. Xun
School of Science
Email: guoming1012@sina.com
República Popular da China, Changchun, 130022
Y. Boshi
School of Science
Email: guoming1012@sina.com
República Popular da China, Changchun, 130022
J. Guangyong
School of Science
Email: guoming1012@sina.com
República Popular da China, Changchun, 130022
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