Silicon Ablation by Single Ultrashort Laser Pulses of Variable Width in Air and Water


Дәйексөз келтіру

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Аннотация

The ablation of silicon by single laser pulses of variable width (0.3–9.5 ps) with a wavelength of 515 nm has been comparatively studied in air and water. A nonmonotonic behavior of ablation thresholds with a minimum at 1.6 ps, which is due to achieving the thermalization time of the electron and ion subsystems in silicon, has been revealed. It has been shown that, with an increase in the pulse width in the considered width range, the efficiency of the ablation of silicon decreases by a factor of 2.5 in air and increases by a factor of 2 in water. This behavior of ablation in air is attributed to a partial transition from phase explosion to surface evaporation, which is suppressed in water.

Авторлар туралы

N. Smirnov

Lebedev Physical Institute

Хат алмасуға жауапты Автор.
Email: cna1992@mail.ru
Ресей, Moscow, 119991

S. Kudryashov

Lebedev Physical Institute; National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: cna1992@mail.ru
Ресей, Moscow, 119991; Moscow, 115409

P. Danilov

Lebedev Physical Institute

Email: cna1992@mail.ru
Ресей, Moscow, 119991

A. Rudenko

Lebedev Physical Institute

Email: cna1992@mail.ru
Ресей, Moscow, 119991

A. Ionin

Lebedev Physical Institute

Email: cna1992@mail.ru
Ресей, Moscow, 119991

A. Nastulyavichus

Lebedev Physical Institute

Email: cna1992@mail.ru
Ресей, Moscow, 119991

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