Email this article Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity
- Authors: Zhuravlev A.G.1,2, Khoroshilov V.S.1,2, Alperovich V.L.1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Issue: Vol 105, No 10 (2017)
- Pages: 686-690
- Section: Miscellaneous
- URL: https://journals.rcsi.science/0021-3640/article/view/160330
- DOI: https://doi.org/10.1134/S0021364017100149
- ID: 160330
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Abstract
The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.
About the authors
A. G. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: alper@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. S. Khoroshilov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: alper@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. L. Alperovich
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: alper@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
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