A Technique for Detecting Subpicosecond Reflection or Transmission Kinetics
- 作者: Borisov G.M.1,2, Gol’dort V.G.1, Kovalyov A.A.1, Ledovskikh D.V.1, Rubtsova N.N.1
- 
							隶属关系: 
							- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
 
- 期: 卷 61, 编号 1 (2018)
- 页面: 94-98
- 栏目: General Experimental Techniques
- URL: https://journals.rcsi.science/0020-4412/article/view/160078
- DOI: https://doi.org/10.1134/S0020441218010025
- ID: 160078
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A double-modulation technique was developed and tested experimentally for the detection of the kinetics of reflection of subpicosecond pulses of probe near-IR radiation from a sample (or transmission through it) after the action of exciting radiation pulses. A probe signal is detected at a frequency that is equal to the sum of stabilized unequal frequencies of interrupting exciting and probe radiations, thus permitting the elimination of the contribution of scattered exciting radiation from the valid signal. When detecting the semiconductor- sample reflectance kinetics with a time resolution of 0.13 ps, the reflection sensitivity ΔR/R = 5 × 10–6 was reached.
作者简介
G. Borisov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
														Email: rubtsova@isp.nsc.ru
				                					                																			                												                	俄罗斯联邦, 							Novosibirsk, 630090; Novosibirsk, 630090						
V. Gol’dort
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: rubtsova@isp.nsc.ru
				                					                																			                												                	俄罗斯联邦, 							Novosibirsk, 630090						
A. Kovalyov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: rubtsova@isp.nsc.ru
				                					                																			                												                	俄罗斯联邦, 							Novosibirsk, 630090						
D. Ledovskikh
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: rubtsova@isp.nsc.ru
				                					                																			                												                	俄罗斯联邦, 							Novosibirsk, 630090						
N. Rubtsova
Rzhanov Institute of Semiconductor Physics, Siberian Branch
							编辑信件的主要联系方式.
							Email: rubtsova@isp.nsc.ru
				                					                																			                												                	俄罗斯联邦, 							Novosibirsk, 630090						
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