Protection against degradation of the edge contour in fast-ionization dynistors
- Autores: Aristov Y.V.1, Voronkov V.B.1, Grekhov I.V.1, Korotkov D.A.1, Korotkov S.V.1, Matlashov P.E.1
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Afiliações:
- Ioffe Physical Technical Institute
- Edição: Volume 60, Nº 2 (2017)
- Páginas: 210-212
- Seção: Electronics and Radio Engineering
- URL: https://journals.rcsi.science/0020-4412/article/view/159610
- DOI: https://doi.org/10.1134/S0020441217010304
- ID: 159610
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Resumo
The results of studying silicon semiconductor devices with nanosecond turning-on times, that is, fast-ionization dynistors (FIDs), are presented. The effect of an abrupt increase in the leakage current that flows through an FID upon blocking of the power voltage after the termination of a train of switched pulses is discovered and described. It is shown that under certain conditions this effect may result in the destruction of the FID. Methods for modifying FIDs are presented that allow stabilization of the leakage current.
Sobre autores
Yu. Aristov
Ioffe Physical Technical Institute
Email: Korotkov@mail.ioffe.ru
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. Voronkov
Ioffe Physical Technical Institute
Email: Korotkov@mail.ioffe.ru
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021
I. Grekhov
Ioffe Physical Technical Institute
Email: Korotkov@mail.ioffe.ru
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021
D. Korotkov
Ioffe Physical Technical Institute
Email: Korotkov@mail.ioffe.ru
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021
S. Korotkov
Ioffe Physical Technical Institute
Autor responsável pela correspondência
Email: Korotkov@mail.ioffe.ru
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021
P. Matlashov
Ioffe Physical Technical Institute
Email: Korotkov@mail.ioffe.ru
Rússia, ul. Politekhnicheskaya 26, St. Petersburg, 194021
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