Investigation of Reverse Switch-On Dynistors Upgraded for Reducing the Energy Loss when Switching Reverse-Current Pulses

Abstract

The results of investigations of new semiconductor devices, reverse switch-on dynistors dynistors–diodes (RSDDs), with an operating voltage of 2 kV and a 50-mm diameter of the structure are presented. Their comparison with conventional RSDs shows that the losses in RSDDs are approximately 2 times lower when high-power reverse-current pulses are switched, the losses are virtually the same during switching, and the losses are 15–20% higher when switching rapidly rising forward-current pulses. The limiting abilities of RSDDs are determined when switching unipolar current pulses with a duration of 300 μs: 30 and 100 kA in the reverse and forward directions, respectively. The possibility of reliable switching of alternating slowly damped current pulses with a duration of 40 μs and amplitudes of the first forward and reverse half-waves of 90 and 65 kA, respectively, with which conventional RSDs cannot operate, is shown.