Relative Elongation of Silicicated Silicon Carbide at Temperatures of 1150–2500 K

Abstract

The results of measuring the relative elongation of SiC + Si are presented. Experiments have been carried out in a stationary thermal regime with specimen heating by radiation heat flux with the external heat source. The distance between the labels in the cold and heated states was measured by computational processing of photographs. Pixels were used as unit of measure. The reference temperature is calculated as an arithmetic mean of the two real temperatures measured by the models that were taken out of the section of expansion measurement.