Atomistic Simulation of Impurities Segregation to Free Surfaces of α-Al2O3
- Авторлар: Kislenko V.A.1,2, Vlaskin M.S.1, Kislenko S.A.1
-
Мекемелер:
- Joint Institute for High Temperature, Russian Academy of Science
- Moscow Institute of Physics and Technology (National Research University)
- Шығарылым: Том 53, № 3 (2019)
- Беттер: 177-182
- Бөлім: General Aspects
- URL: https://journals.rcsi.science/0018-1439/article/view/157649
- DOI: https://doi.org/10.1134/S0018143919030093
- ID: 157649
Дәйексөз келтіру
Аннотация
Segregation of di- and trivalent impurities to the (00.1), (01.2) and (11.3) surfaces of α-Al2O3 has been investigated using molecular mechanics simulation. In this work, the focus has been on segregation energy calculations depending on impurity size, distance to the surface, and surface coverage. It has been shown the anisotropic segregation of dopants. The segregation energy to the most stable (00.1) surface has the lowest absolute value for all investigated impurities. For trivalent impurities at the (01.2) surface the dependence of the segregation energy on surface coverage has the minimum, which corresponds to the ordered arrangement of dopants. At the (11.3) surface the multilayer segregation has been observed, whereas at the (00.1) and (01.2) surfaces the model of monolayer segregation is acceptable in most studied cases.
Негізгі сөздер
Авторлар туралы
V. Kislenko
Joint Institute for High Temperature, Russian Academy of Science; Moscow Institute of Physics and Technology (National Research University)
Email: kislenko@ihed.ras.ru
Ресей, Moscow, 125412; Dolgoprudry, Moscow oblast, 141701
M. Vlaskin
Joint Institute for High Temperature, Russian Academy of Science
Email: kislenko@ihed.ras.ru
Ресей, Moscow, 125412
S. Kislenko
Joint Institute for High Temperature, Russian Academy of Science
Хат алмасуға жауапты Автор.
Email: kislenko@ihed.ras.ru
Ресей, Moscow, 125412
Қосымша файлдар
