Heat Capacity and Thermal Expansion of Yttrium Tantalate
- Авторлар: Khoroshilov A.V.1, Ashmarin A.A.1, Guskov V.N.1, Sazonov E.G.2, Gavrichev K.S.1, Novotortsev V.M.1
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Мекемелер:
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
- “Technological Systems of Protective Coatings” Limited Liability Company
- Шығарылым: Том 484, № 1 (2019)
- Беттер: 12-14
- Бөлім: Physical Chemistry
- URL: https://journals.rcsi.science/0012-5016/article/view/153930
- DOI: https://doi.org/10.1134/S0012501619010032
- ID: 153930
Дәйексөз келтіру
Аннотация
The isobaric heat capacities of two monoclinic (M' and M) modifications of yttrium orthotantalate at temperatures 5–1300 K have been measured by the adiabatic and differential scanning calorimetry methods. It has been demonstrated that the difference in structure between the crystal lattices of M' and M has little effect in the heat capacity, and the difference between the heat capacities of these phases Cp(M) – Cp(M') is small, always positive, and increases in the range of the lowest temperatures. The unit cell parameters of M-YTaO4 have been determined as a function of temperature in the range 300–1173 K.
Авторлар туралы
A. Khoroshilov
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: guskov@igic.ras.ru
Ресей, Moscow, 119991
A. Ashmarin
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: guskov@igic.ras.ru
Ресей, Moscow, 119991
V. Guskov
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: guskov@igic.ras.ru
Ресей, Moscow, 119991
E. Sazonov
“Technological Systems of Protective Coatings” Limited Liability Company
Email: guskov@igic.ras.ru
Ресей, Moscow, 142172
K. Gavrichev
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: guskov@igic.ras.ru
Ресей, Moscow, 119991
V. Novotortsev
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: guskov@igic.ras.ru
Ресей, Moscow, 119991
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