Spectral Photosensitivity and Temperature-Independent Volt–Ampere Characteristic of pSi–n(ZnSe)1 –x–y(Si2)x(GaP)y Structures
- Авторы: Saidov A.S.1, Rakhmonov U.K.1, Leiderman A.Y.1
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Учреждения:
- Physical–Technical Institute, Academy of Sciences of the Republic of Uzbekistan
- Выпуск: Том 54, № 5 (2018)
- Страницы: 341-345
- Раздел: Solar Engineering Materials Science
- URL: https://journals.rcsi.science/0003-701X/article/view/149510
- DOI: https://doi.org/10.3103/S0003701X1805016X
- ID: 149510
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Аннотация
The epitaxial layers of the solid substitutional solution (ZnSe)1 – x – y(Si2)x(GaP)y (0 ≤ х ≤ 0.01, 0 ≤ у ≤ 0.09) have been grown on pSi substrates via liquid-phase epitaxy of a limited volume of stannic solution melt. The spectral dependence of the photosensitivity of pSi–n(ZnSe)1 – x – y(Si2)x(GaP)y structures is studied, and peaks of photoresponses are detected with photon energies of 1.6, 1.66, and 1.92 eV at ambient temperature. It is shown that the direct branch of volt–ampere characteristic stably retains its parameters within the temperature range 20–120°C. The values of the “characteristic” energy, as determined from the temperature-independent, volt–ampere characteristic, are 0.33 eV.
Об авторах
A. Saidov
Physical–Technical Institute, Academy of Sciences of the Republic of Uzbekistan
Автор, ответственный за переписку.
Email: amin@uzsci.net
Узбекистан, Tashkent
U. Rakhmonov
Physical–Technical Institute, Academy of Sciences of the Republic of Uzbekistan
Email: amin@uzsci.net
Узбекистан, Tashkent
A. Leiderman
Physical–Technical Institute, Academy of Sciences of the Republic of Uzbekistan
Email: amin@uzsci.net
Узбекистан, Tashkent
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