Morphological and Structural Characteristics of Sb2Se3 Thin Films Fabricated by Chemical Molecular Beam Deposition
- Autores: Razykov T.M.1, Shukurov A.K.1, Kuchkarov K.M.1, Ergashev B.A.1, Khurramov R.R.1, Bekmirzoyev J.G.1, Mavlonov A.A.1
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Afiliações:
- Physical–Technical Institute of the SPA “Physics–Sun,” Academy of Sciences of the Republic of Uzbekistan
- Edição: Volume 55, Nº 6 (2019)
- Páginas: 376-379
- Seção: Solar Engineering Materials Science
- URL: https://journals.rcsi.science/0003-701X/article/view/149710
- DOI: https://doi.org/10.3103/S0003701X19060094
- ID: 149710
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Resumo
This work presents the structural and morphological characteristics of antimony selenide (Sb2Se3) thin films, which were deposited by the chemical molecular beam deposition (CMBD) in atmospheric pressure hydrogen flow on an alkali glass substrate. It was found that the deposition temperature affected the morphology and structure of the films. At a low deposition temperature of 720 K, the film depicts a preferable crystal orientation (211), i.e., one-dimensional (1D) Sb2Se3 ribbons are aligned along the growth direction. Morphological studies show that the grain size increases with the temperature of the substrate; however, the 1D Sb2Se3 chains tend to align along the lateral direction. The Sb2Se3 films were found to have a preferable orientation (211) and polycrystalline structure. At higher substrate temperatures of 770 and 820 K, they also have a polycrystalline structure, but with an orientation (120). The studies of surface morphology show that at low substrate temperatures the samples have fine grains that have sizes of (200–300) nm, but are rather tightly packed and have 1D Sb2Se3 chains, which are aligned along the growth direction that corresponds to the orientation (211). It was found that the Sb2Se3 thin films with the orientation (211) were suitable for an absorber layer of solar cells, due to their anisotropic properties.
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Sobre autores
T. Razykov
Physical–Technical Institute of the SPA “Physics–Sun,” Academy of Sciences of the Republic of Uzbekistan
Email: a_shukurov@yahoo.com
Uzbequistão, Tashkent, 100084
A. Shukurov
Physical–Technical Institute of the SPA “Physics–Sun,” Academy of Sciences of the Republic of Uzbekistan
Autor responsável pela correspondência
Email: a_shukurov@yahoo.com
Uzbequistão, Tashkent, 100084
K. Kuchkarov
Physical–Technical Institute of the SPA “Physics–Sun,” Academy of Sciences of the Republic of Uzbekistan
Email: a_shukurov@yahoo.com
Uzbequistão, Tashkent, 100084
B. Ergashev
Physical–Technical Institute of the SPA “Physics–Sun,” Academy of Sciences of the Republic of Uzbekistan
Email: a_shukurov@yahoo.com
Uzbequistão, Tashkent, 100084
R. Khurramov
Physical–Technical Institute of the SPA “Physics–Sun,” Academy of Sciences of the Republic of Uzbekistan
Email: a_shukurov@yahoo.com
Uzbequistão, Tashkent, 100084
J. Bekmirzoyev
Physical–Technical Institute of the SPA “Physics–Sun,” Academy of Sciences of the Republic of Uzbekistan
Email: a_shukurov@yahoo.com
Uzbequistão, Tashkent, 100084
A. Mavlonov
Physical–Technical Institute of the SPA “Physics–Sun,” Academy of Sciences of the Republic of Uzbekistan
Email: a_shukurov@yahoo.com
Uzbequistão, Tashkent, 100084
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