Мақаланы E-mail арқылы жіберу Influence of CdS Buffer Layer Thickness on the Photovoltaic Parameters of Solar Cells
- Авторлар: Komilov A.G.1
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Мекемелер:
- Physical–Technical Institute, NGO Physics–Sun, Academy of Sciences of the Republic of Uzbekistan
- Шығарылым: Том 54, № 5 (2018)
- Беттер: 308-309
- Бөлім: Direct Conversion of Solar Energy Into Electrical Energy
- URL: https://journals.rcsi.science/0003-701X/article/view/149487
- DOI: https://doi.org/10.3103/S0003701X18050092
- ID: 149487
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Аннотация
The paper presents the results of a study on the optimization of the CdS buffer layer thickness for the production of high efficiency CIGS solar cells by analyzing the photoelectric parameters of elements with different thicknesses of the CdS layer. The difference in the efficiency of elements with CdS layer thicknesses of 20 and 80 nm was 30% (increase), and 50% (decrease) for elements with CdS layer thicknesses of 80 and 120 nm.
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Авторлар туралы
A. Komilov
Physical–Technical Institute, NGO Physics–Sun, Academy of Sciences of the Republic of Uzbekistan
Хат алмасуға жауапты Автор.
Email: asliddin@rambler.ru
Өзбекстан, Tashkent, 100084
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